单片机读写内部flash实现断电数据存储

在单片机编程中，读写内部Flash存储器是一种常见的方法来实现断电数据存储。这里以STM32系列单片机为例，展示如何通过HAL库进行简单的内部Flash读写操作。

以下是一个完整的示例代码，展示了如何擦除、写入和读取内部Flash中的数据。请注意，在实际应用中，你需要根据具体的单片机型号调整Flash地址范围和其他配置。

#include "main.h"
#include "stm32f4xx_hal_flash.h"#define DATA_ADDRESS 0x080E0000 // Flash起始地址，需要根据具体芯片型号调整void SystemClock_Config(void);
static void MX_GPIO_Init(void);int main(void)
{HAL_Init();SystemClock_Config();MX_GPIO_Init();uint32_t dataToWrite = 0xDEADBEEF;uint32_t readData;// Unlock the Flash to enable the flash control register accessHAL_FLASH_Unlock();// Erase the user Flash areaFLASH_EraseInitTypeDef eraseInitStruct;uint32_t pageError = 0;eraseInitStruct.TypeErase = FLASH_TYPEERASE_PAGES;eraseInitStruct.PageAddress = DATA_ADDRESS;eraseInitStruct.NbPages = 1; // 根据实际情况调整页数if (HAL_FLASHEx_Erase(&eraseInitStruct, &pageError) != HAL_OK){// Error occurred while page erase.while (1);}// Program the user Flash area word by wordif (HAL_FLASH_Program(FLASH_TYPEPROGRAM_WORD, DATA_ADDRESS, dataToWrite) == HAL_OK){// Check the written valuereadData = *(__IO uint32_t*)DATA_ADDRESS;if (readData != dataToWrite){// Verify errorwhile (1);}}else{// Error occurred while writing data in Flash memory.while (1);}// Lock the Flash to disable the flash control register accessHAL_FLASH_Lock();// Infinite loopwhile (1){}
}/*** @brief System Clock Configuration* @retval None*/
void SystemClock_Config(void)
{RCC_OscInitTypeDef RCC_OscInitStruct = {0};RCC_ClkInitTypeDef RCC_ClkInitStruct = {0};/** Configure the main internal regulator output voltage*/__HAL_RCC_PWR_CLK_ENABLE();__HAL_PWR_VOLTAGESCALING_CONFIG(PWR_REGULATOR_VOLTAGE_SCALE1);/** Initializes the RCC Oscillators according to the specified parameters* in the RCC_OscInitTypeDef structure.*/RCC_OscInitStruct.OscillatorType = RCC_OSCILLATORTYPE_HSE;RCC_OscInitStruct.HSEState = RCC_HSE_ON;RCC_OscInitStruct.PLL.PLLState = RCC_PLL_ON;RCC_OscInitStruct.PLL.PLLSource = RCC_PLLSOURCE_HSE;RCC_OscInitStruct.PLL.PLLM = 8;RCC_OscInitStruct.PLL.PLLN = 336;RCC_OscInitStruct.PLL.PLLP = RCC_PLLP_DIV2;RCC_OscInitStruct.PLL.PLLQ = 7;if (HAL_RCC_OscConfig(&RCC_OscInitStruct) != HAL_OK){// Initialization Errorwhile (1);}/** Initializes the CPU, AHB and APB buses clocks*/RCC_ClkInitStruct.ClockType = RCC_CLOCKTYPE_HCLK | RCC_CLOCKTYPE_SYSCLK | RCC_CLOCKTYPE_PCLK1 | RCC_CLOCKTYPE_PCLK2;RCC_ClkInitStruct.SYSCLKSource = RCC_SYSCLKSOURCE_PLLCLK;RCC_ClkInitStruct.AHBCLKDivider = RCC_SYSCLK_DIV1;RCC_ClkInitStruct.APB1CLKDivider = RCC_HCLK_DIV4;RCC_ClkInitStruct.APB2CLKDivider = RCC_HCLK_DIV2;if (HAL_RCC_ClockConfig(&RCC_ClkInitStruct, FLASH_LATENCY_5) != HAL_OK){// Initialization Errorwhile (1);}
}/*** @brief GPIO Initialization Function* @param None* @retval None*/
static void MX_GPIO_Init(void)
{/* GPIO Ports Clock Enable */__HAL_RCC_GPIOH_CLK_ENABLE();
}

说明：

1. 解锁Flash：在写入或擦除Flash之前，必须先解锁Flash控制寄存器。
2. 擦除Flash：使用HAL_FLASHEx_Erase函数擦除指定的Flash区域。注意，擦除操作是以页为单位进行的。
3. 写入Flash：使用HAL_FLASH_Program函数将数据写入Flash。
4. 锁定Flash：完成操作后，重新锁定Flash以防止意外修改。

请确保在实际项目中正确处理错误情况，并根据具体的应用场景调整代码。